STMicroelectronics and Innoscience have signed a joint development and manufacturing agreement focused on gallium nitride (GaN) power technology, aiming to accelerate next-generation solutions for AI data centers, renewable energy, electric vehicles, and industrial systems. The collaboration enables both companies to share manufacturing capacity and co-develop GaN innovations that address rising global demand for efficient power conversion systems.
Under the agreement, Innoscience will gain access to ST’s front-end manufacturing facilities in Europe to produce GaN wafers, while ST will utilize Innoscience’s 8-inch GaN-on-silicon fabrication capacity in China to support its own product roadmap. Both companies, as integrated device manufacturers, plan to expand their GaN offerings with added supply chain flexibility and geographical diversification. The alliance also strengthens ST’s position in GaN power devices alongside its existing silicon and silicon carbide portfolio.
GaN technology is increasingly critical in designing compact, energy-efficient electronics, offering faster switching speeds and lower power losses compared to traditional silicon. Applications span a wide range of high-growth sectors, including power supplies for data centers, solar energy systems, electric vehicle drivetrains, and motion control systems. The partnership aims to support high-volume GaN deployment, with Innoscience having already shipped over 1 billion GaN devices across multiple markets.
• Joint development of GaN power devices:
• Targets AI data centers, renewable energy, EVs, and industrial electronics.
• Advances roadmap for next-generation GaN-on-silicon power solutions.
• Manufacturing collaboration:
• Innoscience gains access to ST fabs in Europe for GaN wafer production.
• ST can utilize Innoscience’s 8” GaN production capacity in China.
• Boosts supply chain flexibility and geographic manufacturing diversity.
• Technology and market impact:
• GaN enables smaller, more efficient, and lighter power systems.
• Applications include EV powertrains, solar inverters, and AI infrastructure.
• Partnership aims to accelerate industry-wide GaN adoption.
“Together the teams at Innoscience and ST will develop the next generations of GaN technology,” said Dr. Weiwei Luo, Chairman and Founder of Innoscience.
