Intel and Micron Technology unveiled a jointly-developed high speed NAND flash memory technology that is five times faster than conventional NAND, reaching speeds up to 200 megabytes per second (MB/s) for reading data and 100 MB/s for writing data. The performance is achieved by leveraging the new ONFI 2.0 specification and a four-plane architecture with higher clock speeds. In comparison, conventional single level cell NAND is limited to 40 MB/s for reading data and less than 20 MB/s for writing data.
The companies cited a number of advantages of their high speed NAND:
- When used in a hybrid hard drive, high speed NAND can allow the system to read and write data anywhere between two or four times the speed when compared to conventional hard drives.
- With the popularity of digital video cameras and video on demand services, high speed NAND can enable a high-definition movie to be transferred five times faster than conventional NAND.
- With the pending USB 3.0 interface, high speed NAND is expected to effectively deliver on the increased data transfer rates of the new specification, where conventional NAND would act as the bottleneck in system performance. USB 3.0 is aiming for 10 times the bandwidth of current USB 2.0 solutions, or approximately achieving 4.8 Gbps (gigabits per second).
- As NAND continues to move into the PC platform, the Non-Volatile Memory Host Controller Interface (NVMHCI) can take advantage of high speed NAND in solutions such as Intel Turbo Memory, allowing for even better system performance. NVMHCI is designed to provide a standard software programming interface allowing operating system drivers to access NAND flash memory storage in applications such as hard drive caching and solid-state drives.
http://www.micron.com/highspeednandhttp://www.intel.com
