Kioxia Corporation and Nanya Technology unveiled a jointly developed DRAM technology, OCTRAM (Oxide-Semiconductor Channel Transistor DRAM), during the IEEE International Electron Devices Meeting (IEDM) in San Francisco on December 9, 2024. OCTRAM employs a 4F2 cell design using an oxide-semiconductor transistor with high ON current and ultra-low OFF current. This design is optimized to significantly reduce power consumption in applications like AI, post-5G communication systems, and IoT products.
The OCTRAM leverages a cylinder-shaped InGaZnO (indium, gallium, zinc, and oxygen) vertical transistor, achieving an ON current exceeding 15μA/cell and an OFF current below 1aA/cell. The transistor integrates on top of a high-aspect-ratio capacitor using a “capacitor-first” process to enhance memory density and minimize interference. This innovation marks a shift from conventional silicon-based 6F2 DRAM and positions OCTRAM as a scalable solution for low-power, high-density memory.
• Core Innovation: InGaZnO vertical transistor with 4F2 cell design.
• Performance: ON current >15μA/cell; OFF current <1aA/cell.
• Applications: AI, post-5G communications, IoT devices.
• Development Partners: Kioxia Corporation and Nanya Technology.
• Presentation: Debuted at IEDM 2024 in San Francisco.
“We believe this technology can redefine power efficiency for advanced memory solutions and enable a broader range of applications,” a Kioxia spokesperson stated.
