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Home » Samsung's 30nm Mobile DRAM for Thinner & Faster Devices

Samsung's 30nm Mobile DRAM for Thinner & Faster Devices

March 22, 2011
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Samsung Electronics Co. announced first production of four gigabit (Gb), low power double-data-rate 2 (LPDDR2) DRAM using 30 nanometer (nm) class technology. The new chip delivers a data transmission speed of 1,066Mbps, which is more than double that of today’s MDDR, which operates between 333 to 400Mbps.

Samsung said this mobile DRAM chip paves the way for thinner, lighter smartphones, tablets and other mobile devices, with longer battery life.

“Mass production of 4Gb LPDDR2 is a tremendous advancement for the mobile industry, one that will enable our OEM customers to move quickly in launching better differentiated high-performance mobile devices into the market,” said Wanhoon Hong, executive vice president, memory sales & marketing, Samsung Electronics. “Samsung will continue to take the initiative in accelerating growth of the market by providing high-performance, high-density green memory products as often and as early as possible.”

Samsung plans to produce the 4Gb LPDDR2 chip based 1GB (8Gb) packages beginning this month, and plans to produce 2GB (16Gb) packages consisting of four 4Gb devices next month to accommodate a growing need for high-density mobile DRAM solutions.
http://www.samsung.com/GreenMemory

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