Infineon Pushes its Silicon Germanium ICs to 110 GHz

Researchers from Infineon Technologies demonstrated new peak performance values in high frequency integrated circuits developed using the company’s advanced Silicon Germanium (SiGe) bipolar process technology. The measured circuit performances show 10 to 30% higher operating frequency compared to competing circuits from other vendors. Potential applications for such high-speed SiGe circuits include discrete components (transistors and diodes), 40 Gbps low-power wireline communication systems, high speed microwave radio links, ultra wide-band communication systems up to 60GHz and automotive radar systems at 77GHz.
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