MACOM Technology Solutions has announced a new chip-scale hot via process built on its proprietary AlGaAs diode technology. Designed as an alternative to traditional chip-and-wire bonding and copper pillar-based surface-mount technologies (SMT), the hot via process routes RF signal and ground paths vertically through the semiconductor die itself. By eliminating traditional external wire bonds, the technology reduces assembly complexity, improves manufacturing consistency, and minimizes parasitic inductance and resistance to deliver low insertion loss and high isolation at millimeter-wave (mmWave) frequencies.
Alongside the process announcement, MACOM debuted its first physical product utilizing the technology: the MASW-011261, a broadband SP2T switch operating in the 60 to 110 GHz range. Housed in a compact 1.87 mm x 1.98 mm chip-scale package, the switch delivers a typical insertion loss of 0.9 dB, 30 dB of isolation, and sub-20 ns switching speeds. MACOM targets the process for high-frequency control functions, including switches and limiters, and will showcase the technology this week at the International Microwave Symposium (IMS 2026) in Boston.
- Vertical Routing: Eliminates traditional wire bonds by routing RF signal and ground paths directly and vertically through the AlGaAs die.
- Parasitic Reduction: Significantly minimizes parasitic effects, securing high signal integrity and reliable performance deep into the mmWave spectrum.
- First Silicon: Launches via the MASW-011261, a 60–110 GHz broadband SP2T switch featuring 0.9 dB insertion loss and sub-20 ns switching speeds.
- Target Applications: Tailored for high-frequency RF control infrastructure, including switches, limiters, and aerospace/defense systems.
- Live Showcase: MACOM will put the hot via process on display at Booth #17035 during IMS 2026 (June 9–11).
“Our new hot via-based AlGaAs process can reduce assembly complexity while improving the high frequency performance of our integrated components.”
— Stephen G. Daly, President and CEO, MACOM
🌐 Analysis
As advanced packaging continues to dominate the AI and high-speed networking conversation, MACOM’s announcement highlights that packaging innovation is just as critical in the ultra-high-frequency RF and mmWave domains. Traditional wire bonding introduces unpredictable parasitics that degrade signals at extreme frequencies like 100 GHz. By moving the interconnect architecture into the die itself via a hot via process, MACOM bridges the gap between raw silicon capabilities and real-world surface-mount manufacturing. For Converge readers tracking the hardware enabling next-generation satellite communications, 5G/6G wireless backhaul, and high-frequency radar, this represents a major step forward for high-yield, high-frequency component assembly.
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