Samsung announced the industry’s first Graphics Double Data Rate 7 (GDDR7) DRAM with a bandwidth of 1.5-terabytes-per second, yielding 1.4X boost in performance versus GDDR6, which Samsung introduced in 2022.
Samsung’s GDDR7 achieves a boosted speed per pin of up to 32Gbps. The enhancements are made possible by the Pulse-Amplitude Modulation (PAM3) signaling method adopted for the new memory standard instead of the Non-Return-to-Zero (NRZ) from previous generations. PAM3 allows 50-percent more data to be transmitted than NRZ within the same signaling cycle.
“Our GDDR7 DRAM will help elevate user experiences in areas that require outstanding graphic performance, such as workstations, PCs and game consoles, and is expected to expand into future applications such as AI, high-performance computing (HPC) and automotive vehicles,” said Yongcheol Bae, Executive Vice President of Memory Product Planning Team at Samsung Electronics. “The next-generation graphics DRAM will be brought to market in line with industry demand and we plan on continuing our leadership in the space.”
In addition, to minimize heat generation, an epoxy molding compound (EMC) with high thermal conductivity is used for the packaging material in addition to IC architecture optimization. Samsung says these improvements dramatically reduce thermal resistance by 70-percent in comparison to GDDR6, aiding in stable product performance even in conditions with high-speed operations.