Coherent Corp. introduced new silicon carbide (SiC) thick epitaxy capabilities designed to support power devices operating up to 10kV, targeting next-generation AI data centers and high-voltage industrial systems. The announcement reflects growing demand for higher efficiency and power density as hyperscale AI infrastructure scales toward multi-megawatt deployments.
The company’s 150mm and 200mm epitaxy platforms now enable production of multi-kilovolt SiC devices, with demonstrated performance extending beyond the 10kV threshold. These advancements allow system designers to build more compact and energy-efficient power conversion architectures across applications including grid infrastructure, rail systems, renewable energy, and fast-charging networks. In AI data centers, higher-voltage operation can reduce losses in power distribution and improve overall system efficiency.
Coherent continues to expand its vertically integrated SiC portfolio, spanning substrates through advanced epitaxy, to address demand across industrial, automotive, and energy markets. The company is positioning SiC as a critical enabler for next-generation power systems, particularly as AI workloads drive higher rack densities and stricter efficiency requirements across hyperscale environments.
- Enables silicon carbide power devices operating up to 10kV
- Supports 150mm and 200mm wafer platforms for production scalability
- Targets AI data centers, renewable energy, rail, and grid infrastructure
- Improves power density and conversion efficiency in multi-megawatt systems
- Extends capability beyond 10kV for demanding industrial environments
“Next-generation datacenter power architectures and high-voltage industrial systems are key drivers for silicon carbide adoption,” said Gary Ruland, Senior Vice President, Silicon Carbide LLC at Coherent. “Our new thick epitaxy capability for multi-kilovolt SiC devices enables customers to achieve higher efficiency and power density in critical applications such as energy infrastructure, high-capacity uninterruptible power supplies, and advanced power distribution systems in AI datacenters.”
🌐 Analysis
SiC continues to gain traction as a foundational technology for high-efficiency power delivery in AI infrastructure, where electrical losses directly translate into operational cost and thermal constraints. Coherent’s move into thicker epitaxy for 10kV-class devices aligns with broader industry efforts to push power conversion closer to the rack and enable higher-voltage DC distribution architectures inside data centers.
Competitors including Wolfspeed, onsemi, and STMicroelectronics are also investing in wide-bandgap materials and larger wafer formats to scale supply and reduce cost per watt. The shift toward 200mm SiC and higher-voltage device classes suggests the next phase of innovation will focus on system-level integration, where power electronics, cooling, and AI compute infrastructure are increasingly co-optimized.
