Atomera expanded its collaboration with Synopsys to accelerate modeling of gallium nitride (GaN) devices targeting high-growth RF and power semiconductor markets. The effort integrates Atomera’s Mears Silicon Technology (MST®) with Synopsys’ Sentaurus™ TCAD simulation environment to improve device design accuracy and speed time-to-market for next-generation components.
The collaboration extends an existing relationship between the companies, which previously enabled modeling of Atomera’s MST films within Synopsys’ TCAD workflows via MSTcad™. The new phase focuses on GaN-specific calibration methodologies, including the development of validated TCAD models and simulation decks. These tools aim to give semiconductor designers deeper insight into how advanced materials impact device performance, particularly for high-efficiency power electronics and RF systems.
GaN has emerged as a critical material platform for applications requiring high power density, efficiency, and frequency performance, including 5G infrastructure, electric vehicles, and data center power delivery. By combining MST’s quantum-engineered thin films with TCAD-based modeling, the companies aim to enable more predictive design workflows and reduce costly fabrication iterations.
- Expanded collaboration targets GaN device modeling for RF and power markets
- Integration of MST® films into Sentaurus™ TCAD workflows via MSTcad™
- Development of calibrated GaN simulation models and TCAD decks
- Focus on improving design accuracy, efficiency, and time-to-market
- Addresses growing demand for high-performance GaN in 5G, EVs, and power electronics
“Synopsys has a strong history of working with innovative semiconductor technology companies to help customers evaluate and integrate new capabilities,” said Rahul Deokar, executive director of product management for Manufacturing Solutions at Synopsys. “Our broadened collaboration with Atomera is focused on advancing GaN TCAD simulations to gain deeper insights into how advanced materials can be leveraged to design more efficient devices and address the semiconductor industry’s future RF and power challenges.”
🌐 Analysis: The collaboration highlights the increasing importance of materials-aware simulation in semiconductor design, particularly as GaN adoption accelerates across RF front-end and power conversion markets. By embedding MST into TCAD workflows, Atomera positions itself upstream in the design cycle, where decisions on materials and device architecture are made—potentially expanding its licensing footprint.
Synopsys continues to deepen its role as a central platform for advanced node and heterogeneous materials modeling, competing with Cadence Design Systems and Siemens EDA in enabling next-generation semiconductor innovation. As GaN and other compound semiconductors gain traction alongside silicon, tighter integration between materials science and EDA tools is becoming a critical differentiator.
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