SK hynix previewed samples of its 321-layer 4D NAND at this week’s Flash Memory Summit (FMS) 2023 in Santa Clara, California. The company plans to raise the level of completion of the 321-layer product and start mass production from the first half of 2025.
The device is the first NAND memory to exceed 300 layers.
SK hynix expects its 321-layer 1Tb TLC NAND comes will bring a 59% improvement in productivity, compared with the earlier generation of 238-layer 512Gb, thanks to the technology development that enabled stacking of more cells and larger storage capacity on a single chip, meaning the total capacity that can be produced on a single wafer increased.
SK hynix also announced that it has started development of the next-generation PCIe Gen6 and UFS 5.0.
