Vitesse Participates in Darpa Research into Indium Phosphide Chips

Vitesse Semiconductor, BAE SYSTEMS and the University of Illinois Urbana Champain (UIUC) are collaborating on a $6 million contract from the Defense Advanced Research Projects Agency (DARPA) to develop next generation indium phosphide (InP) integrated circuits for military communications. The research program will leverage Vitesse’s sub-micron VIP-2 Indium Phosphide Heterojunction Bipolar Transmitter (InP HBT) technology. The initial circuits are for direct digital frequency synthesis (DDFS) for electronic warfare and radar applications.
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