Intel celebrated the opening of Fab 9 in Rio Rancho, New Mexico.
Fab 9 is set to play a pivotal role in driving Intel’s ongoing advancements in advanced packaging technologies. With the semiconductor industry transitioning into the heterogeneous era that embraces multiple “chiplets” within a single package, cutting-edge packaging technologies like Foveros and EMIB (embedded multi-die interconnect bridge) offer a swifter and more cost-effective path toward achieving the milestone of 1 trillion transistors on a single chip, extending Moore’s Law beyond 2030.
Intel’s Foveros 3D advanced packaging technology enables the stacking of compute tiles vertically rather than horizontally. This innovation empowers both Intel and its foundry customers to mix and match compute tiles, optimizing cost and power efficiency in the process.
This achievement also marks a significant step in Intel’s planned $3.5 billion investment in its New Mexico facilities.
“Today, we celebrate the opening of Intel’s first high-volume semiconductor operations and the only U.S. factory producing the world’s most advanced packaging solutions at scale. This cutting-edge technology sets Intel apart and gives our customers real advantages in performance, form factor and flexibility in design applications, all within a resilient supply chain. Congratulations to the New Mexico team, the entire Intel family, our suppliers, and contractor partners who collaborate and relentlessly push the boundaries of packaging innovation, stated Keyvan Esfarjani, Intel executive vice president and chief global operations officer.
